| PART |
Description |
Maker |
| 2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管（功率放大器，放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| 2SA1241 E000486 |
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) 晶体管（功率放大器，开关应用）
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| CJD42CPNP CJD41C CJD41CNPN CJD42C |
SMD Bipolar Power Transistor PNP General Purpose Amplifier/Switch
COMPLEMENTARY SILICON POWER TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1557 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3076 E000787 |
TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS) 晶体管（功率放大器，SWITCING应用
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 2SA1837 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| KSC1173 KSC1173OJ69Z KSC1173YTU |
NPN Epitaxial Silicon Transistor
Low Frequency Power Amplifier Power Regulator
3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
